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Si4914DY
New Product
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V DS (V) r DS(on) ( Ω )
0.023 at V GS = 10 V
Channel-1
0.032 at V GS = 4.5 V
30
0.020 at V GS = 10 V
Channel-2
0.027 at V GS = 4.5 V
I D (A)
7.0
5.6
7.4
6.4
FEATURES
? LITTLE FOOT ? Plus Integrated Schottky
? 100 % R g Tested
APPLICATIONS
? Logic DC/DC
- Notebook PC
RoHS
COMPLIANT
SCHOTTKY PRODUCT SUMMARY
V DS (V)
30
V SD (V)
Diode Forward Voltage
0.40 V at 1.0 A
SO-8
I F (A)
2.0
G 1
D 1
D 1
1
8
G 1
N-Channel 1
D 1
G 2
S 2
2
3
4
7
6
5
S 1 /D 2
S 1 /D 2
S 1 /D 2
MOSFET
G 2
S 1 /D 2
Schottky Diode
Top View
Ordering Information: Si4914DY-T1-E3 (Lead (Pb)-free)
N-Channel 2
MOSFET
S 2
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Channel-1
10 sec Steady State
30
20
Channel-2
10 sec Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
7.0
5.6
40
5.5
4.3
7.4
6
40
5.7
4.5
A
Continuous Source Current (Diode Conduction) a
I S
1.7
1.0
1.8
0.95
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I AS
E AS
13
8.45
15
11
mJ
Maximum Power Dissipation a
T A = 25 °C
T A = 70 °C
P D
1.9
1.2
1.1
0.71
2.0
1.3
1.16
0.74
W
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Typ Max
Channel-2
Typ Max
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 10 sec
Steady State
Steady State
R thJA
R thJF
52
90
30
65
112
38
47
85
28
60
107
35
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 72938
S-61959-Rev. C, 09-Oct-06
www.vishay.com
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